IR-OBIRCH is a fault localization technique used in semiconductor failure analysis to detect and pinpoint electrical defects in integrated circuits (ICs). It works by scanning a focused infrared laser beam across the IC surface, inducing localized heating that alters the electrical resistance in defective regions. These resistance changes are monitored to identify shorts, leakage paths, and other anomalies.
This method is non-destructive and highly sensitive, making it suitable for identifying subtle defects such as gate oxide pinholes, poly shorts, and metal layer issues. IR-OBIRCH is commonly used in conjunction with other techniques like SEM, EMMI, and EBSD to support comprehensive failure analysis.
