Infrared Optical Beam Induced Resistance Change (IR-OBIRCH) analysis is a powerful fault localization technique for integrated circuits. It is widely used in semiconductor failure analysis to precisely localize various types of shorts, including: Poly shorts, Metal shorts, Active area shorts, Shorts in source or drain wells, Gate oxide pinholes, etc.
- Precision Fault Localization: Accurately identifies faults in integrated circuits.
- Comprehensive Analysis: Detects a wide range of shorts and defects.
- Advanced Technology: Utilizes cutting-edge IR-OBIRCH techniques for reliable results.
Applications
Our IR-OBIRCH analysis services are essential for semiconductor failure analysis, providing detailed insights into fault localization and helping improve the reliability of integrated circuits.
For more information about our IR-OBIRCH analysis services, please contact us. We are here to support your semiconductor analysis needs.